MRF557G Datasheet - Advanced Power Technology





MRF557G Datasheet - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF557G   MRF557G  

Datasheet: MRF557G datasheet

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Description: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 1 8936-1013 PHONE: (215) 631-9840 FAX: (2 15) 631-9855 RF & MICROWAVE DISCRETE LO W POWER TRANSISTORS Features • Specif ied @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W • Minimum Gai n = 8 dB • Efficiency 60% (Typ) • C ost Effective PowerMacro Package • El ectroless Tin Plated Leads for Improved Solderability MRF557 MRF557G * G Deno tes RoHS Compliant, Pb Free Terminal Fi nish Power Macro DESCRIPTION: Designed primarily for wideband large signal st ages in the UHF frequency range. ABSOL UTE MAXIMUM RATINGS (Tcase = 25°C) Sy mbol Parameter VCEO Collector-Emitte r Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Curren


Manufacture Part Number Description

Advanced Power Technology

MRF557G

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS




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