MRF559

MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor . . . designed for UHF linear and large–signal amplifier applications. Specified 12.5 Volt, 870 MHz Characteristics — Output Power = 0.5 Watts Minimum Gain = 8.0 dB Efficiency 50% S Parameter Data From 250 MHz to 1.5 GHz 1.0 dB Compression > + 20 dBm Typ Ideally Suited for Broadband, Class A, Low–Noise Applications Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. Order this document by MRF559/D MRF559 0.5 W, 870 MHz HIGH–FREQUENCY TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 50°C Derate above 50°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 16 36 3.0 150 2.0 20 – 65 to +150 Unit Vdc Vdc Vdc mAdc Watts mW/°C °C ELECTRICAL CHARACTERISTICS (TC = 25°C ...