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CE3520K3 Dataheets PDF



Part Number CE3520K3
Manufacturers CEL
Logo CEL
Description Super Low Noise FET
Datasheet CE3520K3 DatasheetCE3520K3 Datasheet (PDF)

DATASHEET RF Low Noise FET CE3520K3 20 / 24 GHz Super Low Noise FET in Hollow Plastic PKG DESCRIPTION  Super Low Noise and High Gain  Hollow (Air cavity) Plastic package FEATURES  Super Low noise figure and high associated gain: NF = 0.55 dB TYP., Ga = 13.8 dB TYP. @VDS = 2 V, ID = 10 mA, f = 20 GHz NF = 0.80 dB TYP., Ga = 13.9 dB TYP. @VDS = 2 V, ID = 10 mA, f = 24 GHz PACKAGE  Micro-X plastic package APPLICATIONS  K-Band LNB (Low Noise Block)  Doppler Sensor  Low Noise Amplifier for m.

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DATASHEET RF Low Noise FET CE3520K3 20 / 24 GHz Super Low Noise FET in Hollow Plastic PKG DESCRIPTION  Super Low Noise and High Gain  Hollow (Air cavity) Plastic package FEATURES  Super Low noise figure and high associated gain: NF = 0.55 dB TYP., Ga = 13.8 dB TYP. @VDS = 2 V, ID = 10 mA, f = 20 GHz NF = 0.80 dB TYP., Ga = 13.9 dB TYP. @VDS = 2 V, ID = 10 mA, f = 24 GHz PACKAGE  Micro-X plastic package APPLICATIONS  K-Band LNB (Low Noise Block)  Doppler Sensor  Low Noise Amplifier for microwave communication systems ORDERING INFORMATION Part Number CE3520K3 Order Number CE3520K3-C1 Package Micro-X plastic package Marking C6 Description • Embossed tape 8 mm wide • Pin 4 (Gate) faces the perforation side of the tape • MOQ 10k pcs/reel This document is subject to change without notice. Date Published: July 2019 CDS-0019-04 (Issue C) 1 PIN CONFIGURATION AND INTERNAL BLOCK DIAGRAM Pin No. 1 2 3 4 Pin Name Source Drain Source Gate CE3520K3 ABSOLUTE MAXIMUM RATINGS (TA = +25˚C, unless otherwise specified) Parameter Symbol Rating Drain to Source Voltage VDS 4.0 Gate to Source Voltage VGS -3.0 Drain Current ID IDSS Gate Current IG 80 Total Power Dissipation Ptot 125 Channel Temperature Tch +150 Storage Temperature Tstg -55 to +125 Operation Temperature Top -55 to +125Note Note Refer to Total Power Dissipation vs. Ambient Temperature graph on page 4 Unit V V mA µA mW °C °C °C RECOMMENDED OPERATING RANGE (TA = +25˚C, unless otherwise specified) Parameter Symbol MIN. Drain to Source Voltage VDS +1 Drain Current ID 5 TYP. +2 10 MAX. +3 15 Unit V mA This document is subject to change without notice. 2 ELECTRICAL CHARACTERISTICS (TA = +25˚C, unless otherwise specified) Parameter Symbol Condition Gate to Source Leak Current Saturated Drain Current IGSO IDSS VGS = -3.0V VDS = 2V, VGS = 0V Gate to Source Cut-off Voltage Transconductance VGS(off) Gm VDS = 2V, ID = 100µA VDS = 2V, ID = 10mA Noise Figure1 Associated Gain1 NF VDS = 2V, ID = 10mA, Ga f = 20GHz Noise Figure2 NF Associated Gain2 Ga 1. 100% tested on production devices 2. Not tested on production devices VDS = 2V, ID = 10mA, f = 24GHz CE3520K3 MIN. 23.0 -1.10 47.0 11.5 TYP. 0.4 40.0 -0.75 62.0 0.55 13.8 MAX. 10 57.0 -0.39 0.80 - Unit µA mA V mS dB dB - 0.80 1.30 dB 11.5 13.9 - dB This document is subject to change without notice. 3 TYPICAL CHARACTERISTICS: (TA=+25℃, unless otherwise specified) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE CE3520K3 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE MINIMUM NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT This document is subject to change without notice. 4 CE3520K3 This document is subject to change without notice. 5 S-PARAMETERS S-Parameters are available on the CEL web site. RECOMMENDED SOLDERING CONDITIONS Recommended Soldering Conditions are provided on the CEL web site. PACKAGE DIMENSIONS Micro-X plastic package CE3520K3 This document is subject to change without notice. 6 REVISION HISTORY Version CDS-0019-03 (Issue A) February 12, 2016 CDS-0019-03 (Issue B) April 27, 2016 CDS-0019-04 (Issue A) July 29, 2016 Change to current version Initial datasheet Updated Marking Information Updated Specs in “Absolute Maximum Ratings” Table Added “Typical Characteristics” section (graphs) Added “S-Parameters” and “Recommended Soldering Conditions” sections CDS-0019-04 (Issue B) Dec 04, 2018 Updated Applications Updated marking by adding a dot to the package Gate CDS-0019-04 (Issue C) July 02, 2019 Added 24GHz Electrical and Typical Characteristics CE3520K3 Page(s) N/A 1, 2, 3 2, 4, 6 1, 2, 6 1,3, 5 This document is subject to change without notice. 7 CE3520K3 [CAUTION] • All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. • You should not alter, modify, copy, or otherwise misappropriate any CEL product, whether in whole or in part. • CEL does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of CEL products or technical information described in this document. No license, expressed, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of CEL or others. • Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. CEL assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. • CEL has used reasonable care in preparing the information included in t.


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