CE3521M4

RF Low Noise FET CE3521M4 20 GHz LoEwnteNr oa iSsheorFtEDTociunmDenuta/TlitMleoNladmPe lHaesrteic PKG DESCRIPTION  Low Noise and High Gain  Original Dual Mold Plastic package FEATURES  Low noise figure and high associated gain: NF = 0.70 dB TYP., Ga = 11.9 dB TYP. @VDS = 2 V, ID = 10 mA, f = 20 GHz PACKAGE  Flat-lead 4-pin thin-type super minimold package APPLICATIONS  DBS LNB gain-stage, Mix-stage  Low noise amplifier for microwave communication systems ORDERING INFORMATION Part Number Order Number CE3521M4 CE3521M4-C2 Package Flat-lead 4-pin thin-type super minimold package Marking C04 Description Embossed tape 8 mm wide Pin 1 (source), Pin 2 (drain) face the perforation side of the tape MOQ 15 kpcs/reel This document is subject to change without notice. Date Published: July 2016 CDS-0020-04 (Issue A) 1 PIN CONFIGURATION AND INTERNAL BLOCK DIAGRAM Pin No. 1 2 3 4 Pin Name Source Drain Source Gate CE3521M4 ABSOLUTE MAXIMUM RATINGS (TA = +25˚C, unless otherwise specified) Parameter Symbol Rating Drain to Source Voltage Gate to Source Voltage VDS 4.0 VGS -3.0 Drain Current Gate Current ID IDSS IG 80 Total Power Dissipation Channel Temperature Ptot 125 Tch +150 Storage Temperature Tstg -55 to +125 Operation Temperature Top -55 to +125Note Note Refer to Total Power Dissipation vs. Ambient Temperature graph on page 4 Unit V V mA µA mW °C °C °C RECOMMENDED OPERATING RANGE (TA = +25˚C, unless otherwise specified) Parameter Symbol MIN...