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K2016

Silicon N-Channel Power F-MOS

Description

Power F-MOS FETs 2SK2016 Silicon N-Channel Power F-MOS s Features q Low ON-resistance RDS(on) : RDS(on)1= 0.315Ω(typ) q High-speed switching : tf= 38ns(typ) q No secondary breakdown q For low-voltage drive(VGS= 4V) q Taping supply possible s Applications q DC-DC converter q Non-contact relay q Solenoid drive q Motor drive s Absolute Maximum Ratings (Tc =...

Panasonic

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