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IPA60R060C7

Infineon

MOSFET

IPA60R060C7 MOSFET 600VCoolMOSªC7PowerDevice CoolMOS™C7isarevolutionarytechnologyforhighvoltagepower MOSFE...


Infineon

IPA60R060C7

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Description
IPA60R060C7 MOSFET 600VCoolMOSªC7PowerDevice CoolMOS™C7isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. 600VCoolMOS™C7seriescombinestheexperienceoftheleadingSJ MOSFETsupplierwithhighclassinnovation. The600VC7isthefirsttechnologyeverwithRDS(on)*Abelow1Ohm*mm². Features Suitableforhardandsoftswitching(PFCandhighperformanceLLC) IncreasedMOSFETdv/dtruggednessto120V/ns IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg BestinclassRDS(on)/package Benefits IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesinthe application Higherdv/dtlimitenablesfasterswitchingleadingtohigherefficiency Enablinghighersystemefficiencybylowerswitchinglosses Increasedpowerdensitysolutionsduetosmallerpackages Suitableforapplicationssuchasserver,telecomandsolar Higherswitchingfrequenciespossiblewithoutlossinefficiencydueto lowEossandQg Potentialapplications PFCstagesandPWMstages(TTF,LLC)forhighpower/performance SMPSe.g.Computing,Server,Telecom,UPSandSolar. Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max ...




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