MOSFET
IPA60R060C7
MOSFET
600VCoolMOSªC7PowerDevice
CoolMOS™C7isarevolutionarytechnologyforhighvoltagepower MOSFE...
Description
IPA60R060C7
MOSFET
600VCoolMOSªC7PowerDevice
CoolMOS™C7isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. 600VCoolMOS™C7seriescombinestheexperienceoftheleadingSJ MOSFETsupplierwithhighclassinnovation. The600VC7isthefirsttechnologyeverwithRDS(on)*Abelow1Ohm*mm².
Features
Suitableforhardandsoftswitching(PFCandhighperformanceLLC) IncreasedMOSFETdv/dtruggednessto120V/ns IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg BestinclassRDS(on)/package
Benefits
IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesinthe application Higherdv/dtlimitenablesfasterswitchingleadingtohigherefficiency Enablinghighersystemefficiencybylowerswitchinglosses Increasedpowerdensitysolutionsduetosmallerpackages Suitableforapplicationssuchasserver,telecomandsolar Higherswitchingfrequenciespossiblewithoutlossinefficiencydueto lowEossandQg
Potentialapplications
PFCstagesandPWMstages(TTF,LLC)forhighpower/performance SMPSe.g.Computing,Server,Telecom,UPSandSolar.
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
...
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