Si3585DV

Si3585DV Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) N-Channel 20 0.125 at VGS = 4.5 V 0.200 at VGS = 2.5 V P-Channel - 20 0.200 at VGS = - 4.5 V 0.340 at VGS = - 2.5 V ID (A) 2.4 1.8 - 1.8 - 1.2 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFETs Compliant to RoHS Directive 2002/95/EC G1 3 mm S2 G2 TSOP-6 Top View 16 25 34 D1 S1 D2 2.85 mm Ordering Information: Si3585DV-T1-E3 (Lead (Pb)-free) Si3585DV-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 S2 G2 G1 S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted N-Channel P-Channel Parameter Symbol 10 s Steady State 10 s Steady State Drain-Source Voltage VDS 20 - 20 Gate-Source Voltage VGS ± 12 ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 2.4 1.7 2.0 - 1.8 - 1.5 1.4 - 1.3 - 1.2 Pulsed Drain Current IDM 8 -7 Continuous Source Curre...