Si7949DP

Dual P-Channel 60-V (D-S) MOSFET Si7949DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.064 at VGS = - 10 V - 60 0.080 at VGS = - 4.5 V ID (A) -5 - 4.5 Qg (Typ.) 26 FEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET® Power MOSFET New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile PowerPAK SO-8 6.15 mm S1 1 G1 2 5.15 mm S2 3 G2 4 D1 8 D1 7 D2 6 D2 5 Bottom View Ordering Information: Si7949DP-T1-E3 (Lead (Pb)-free) Si7949DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 G1 G2 D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendation...