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TPSMC7.5 Dataheets PDF



Part Number TPSMC7.5
Manufacturers Vishay
Logo Vishay
Description Transient Voltage Suppressors
Datasheet TPSMC7.5 DatasheetTPSMC7.5 Datasheet (PDF)

www.vishay.com TPSMC6.8A thru TPSMC47A Vishay General Semiconductor Surface Mount PAR® Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions SMC (DO-214AB) PRIMARY CHARACTERISTICS VBR 6.8 V to 47 V VWM PPPM 5.8 V to 40.2 V 1500 W IFSM 200 A TJ max. 185 °C Polarity Uni-directional Package SMC (DO-214AB) TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, .

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www.vishay.com TPSMC6.8A thru TPSMC47A Vishay General Semiconductor Surface Mount PAR® Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions SMC (DO-214AB) PRIMARY CHARACTERISTICS VBR 6.8 V to 47 V VWM PPPM 5.8 V to 40.2 V 1500 W IFSM 200 A TJ max. 185 °C Polarity Uni-directional Package SMC (DO-214AB) TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication. FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 185 °C capability suitable for high reliability and automotive requirement • Available in uni-directional polarity only Available • 1500 W peak pulse power capability with a 10/1000 μs waveform • Excellent clamping capability • Very fast response time • Low incremental surge resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 or P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 MECHANICAL DATA Case: SMC (DO-214AB) Molding compound meets UL 94 V-0 flammability rating Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B, ...) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 HE3 and HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Peak pulse power dissipation with a 10/1000 μs waveform (fig. 3) (1)(2) PPPM Peak power pulse current with a 10/1000 μs waveform (fig. 1) (1) IPPM Peak forward surge current 8.3 ms single half sine-wave (2)(3) IFSM Maximum instantaneous forward voltage at 100 A (2)(3) VF Operating junction and storage temperature range TJ, TSTG VALUE 1500 See table next page 200 3.5 -65 to +185 Notes (1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2 (2) Mounted on 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pads at each terminal (3) Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum UNIT W A A V °C Revision: 06-Dec-2018 1 Document Number: 88407 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com TPSMC6.8A thru TPSMC47A Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) DEVICE DEVICE TYPE MARKING CODE BREAKDOWN VOLTAGE VBR (1) AT IT (V) TEST CURRENT IT (mA) MIN. NOM. MAX. STAND-OFF VOLTAGE VWM (V) MAXIMUM REVERSE LEAKAGE AT VWM IR (μA) MAXIMUM REVERSE LEAKAGE AT VWM TJ = 150 °C ID (μA) MAXIMUM MAXIMUM TYPICAL PEAK PULSE CLAMPING TEMP. SURGE VOLTAGE COEFFICIENT CURRENT IPPM (2) AT IPPM VC OF VBR (3) T (A) (V) (%/°C) TPSMC6.8A DEP 6.45 6.80 7.14 10 5.80 1000 10 000 143 10.5 0.047 TPSMC7.5A DGP 7.13 7.50 7.88 10 6.40 500 5000 133 11.3 0.052 TPSMC8.2A DKP 7.79 8.20 8.61 10 7.02 200 2000 124 12.1 0.056 TPSMC9.1A DMP 8.65 9.10 9.55 1 7.78 50 500 112 13.4 0.060 TPSMC10A DPP 9.5 10.0 10.5 1 8.55 20 200 103 14.5 0.064 TPSMC11A DRP 10.5 11.0 11.6 1 9.40 5.0 50 96.2 15.6 0.067 TPSMC12A DTP 11.4 12.0 12.6 1 10.2 2.0 10 89.8 16.7 0.070 TPSMC13A DVP 12.4 13.0 13.7 1 11.1 2.0 10 82.4 18.2 0.072 TPSMC15A DXP 14.3 15.0 15.8 1 12.8 1.0 10 70.8 21.2 0.076 TPSMC16A DZP 15.2 16.0 16.8 1 13.6 1.0 10 66.7 22.5 0.078 TPSMC18A EEP 17.1 18.0 18.9 1 15.3 1.0 10 59.5 25.2 0.080 TPSMC20A EGP 19.0 20.0 21.0 1 17.1 1.0 10 54.2 27.7 0.082 TPSMC22A EKP 20.9 22.0 23.1 1 18.8 1.0 10 49.0 30.6 0.084 TPSMC24A EMP 22.8 24.0 25.2 1 20.5 1.0 10 45.2 33.2 0.085 TPSMC27A EPP 25.7 27.0 28.4 1 23.1 1.0 10 40.0 37.5 0.087 TPSMC30A ERP 28.5 30.0 31.5 1 25.6 1.0 10 36.2 41.4 0.088 TPSMC33A ETP 31.4 33.0 34.7 1 28.2 1.0 10 32.8 45.7 0.089 TPSMC36A EVP 34.2 36.0 37.8 1 30.8 1.0 15 30.1 49.9 0.090 TPSMC39A EXP 37.1 39.0 41.0 1 33.3 1.0 15 27.8 53.9 0.091 TPSMC43A EZP 40.9 43.0 45.2 1 36.8 1.0 20 25.3 59.3 0.092 TPSMC47A FEP 44.7 47.0 49.4 1 40.2 1.0 20 23.1 64.8 0.092 Notes (1) VBR measured after IT applied for 300 μs, IT = square wave pulse or equivalent (2) Surge current waveform per fig. 3 and derated per fig. 2 (3) To calculate VBR vs. junction temperature, use the following formula: VBR at TJ = VBR at 25 °C x (1 + T x (TJ - 25)) (4) All terms and symbols are consistent with ANSI/IEEE C62.3.


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