BSF050N03LQ3G

BSF050N03LQ3 G OptiMOSTM3 Power-MOSFET Features Optimized for high switching frequency DC/DC converter Very low on-resistance R DS(on) Excellent gate charge x R DS(on) product (FOM) Product Summary V DS R DS(on),max ID 30 5 60 Low parasitic inductance Low profile (<0.7 mm) 100% avalanche tested CanPAKTM S MG-WDSON-2 100% Rg Tested Double-sided cooling Pb-free plating; RoHS compliant Compatible with DirectFET® package SQ footprint and outline 1) Qualified according to JEDEC2) for target applications V mΩ A Type BSF050N03LQ3 G Package MG-WDSON-2 Outline SQ Marking 1303 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C 60 A 38 V GS=10 V, T A=25 °C, R thJA=58 K/W2) 15 Pulsed drain current3) Avalanche current, single pulse4) Avalanche energy, single pulse Gate source voltage I D,pulse I AS E AS V GS...