OptiMOS™2 Small-Signal-Transistor
Features • N-channel • Enhancement mode • Ultra Logic level (1.8V rated) • ESD protect...
OptiMOS™2 Small-Signal-
Transistor
Features N-channel Enhancement mode Ultra Logic level (1.8V rated) ESD protected Avalanche rated Qualified according to AEC Q101 100% lead-free; RoHS compliant Halogen-free according to IEC61249-2-21
BSS806NE
Product Summary
VDS RDS(on),max
ID
VGS=2.5 V VGS=1.8 V
20 V 57 mW 82 2.3 A
PG-SOT23 3
1 2
Type BSS806NE
Package SOT23
Tape and Reel H6327: 3000 pcs/ reel
Marking YIs
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current Pulsed drain current
ID I D,pulse
T A=25 °C T A=70 °C T A=25 °C
Halogen Free Yes
Packing Non dry
Value
2.3 1.9 9.3
Unit A
Avalanche energy, single pulse
E AS I D=2.3 A, R GS=25 W
10.8 mJ
Reverse diode dv /dt
Gate source voltage Power dissipation1) Operating and storage temperature
dv /dt
I D=2.3 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C
V GS
P tot T A=25 °C
T j, T stg
ESD Class
JESD22-A114 -HBM
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