OptiMOSTM Power-MOSFET
Features • Optimized for high performance Buck converter • Monolithic integrated Schottky like di...
OptiMOSTM Power-MOSFET
Features Optimized for high performance Buck converter Monolithic integrated
Schottky like diode Very low on-resistance R DS(on) @ V GS=4.5 V 100% avalanche tested N-channel Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21
BSZ018NE2LSI
Product Summary VDS RDS(on),max ID QOSS QG(0V..10V)
25 V
1.8 mW 40 A
23 nC 36 nC
PG-TSDSON-8 (fused leads)
Type
Package
BSZ018NE2LSI PG-TSDSON-8 (fused leads)
Marking 018NE2I
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C
40 A 40 40
V GS=4.5 V, T C=100 °C
40
V GS=4.5 V, T A=25 °C, R thJA=60 K/W2)
22
Pulsed drain current3)
I D,pulse T C=25 °C
160
Avalanche current, single pulse4)
I AS
T C=25 °C
20
Avalanche energy, single pulse
E AS I D=20 A, ...
