Silicon N-Channel MOSFET
WGP15G65 Product Description
Absolute Maximum Ratings
symbol
Parameter
VGE Gate-Emitter Voltage
Collector Current (c...
Description
WGP15G65 Product Description
Absolute Maximum Ratings
symbol
Parameter
VGE Gate-Emitter Voltage
Collector Current (continuous) at TC = 25°C IC
Collector Current (continuous) at TC = 100°C
ICM(1)
Collector Current (pulsed)
Eas Single Pulse Energy TC= 25°C
PTOT
Total Dissipation at TC = 25°C
ESD ESD (Human Body Model)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(1)Pulse width limited by safe operating area
Thermal Characteristics
Symbol
RQJ C RQJ A
Parameter
Thermal Resistance , Junction -to -Case Thermal Resistance , Junction-to -Ambient
Value
40 30 15 45 500 150 3
- 55 to 150
Unit
V A A A mJ W KV
℃
Value Min Typ
---
Max
0.75 62.5
Unit
℃/W ℃/W
Electrical Characteristics (TCASE= 25 °C UNLESS OTHERWISE SPECIFIED)
Symbol
Parameter
Test Conditions
BV(CES) BV(ECR)
ICES IGES
VGE(th)
VCE(SAT)
Clamped Voltage Emitter Collector Break-down Voltage Collector cut-off Current (VGE =0) Gate-Emitter Leakage Current (VCE =0)
Gate Threshold Volta...
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