IPS65R1K4C6

IPS65R1K4C6 MOSFET 650VCoolMOSªC6PowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. TheresultingdevicesprovideallbenefitsofafastswitchingSJMOSFET whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction lossesmakeswitchingapplicationsevenmoreefficient,morecompact, lighterandcooler. Features ExtremelylowlossesduetoverylowFOMRdson*QgandEoss Veryhighcommutationruggedness Easytouse/drive Pb-freeplating,Halogenfreemoldcompound QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) Potentialapplications PFCstages,hardswitchingPWMstagesandresonantswitchingPWM stagesfore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server, TelecomandUPS. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj max 700 V RDS(on),max 1.4 Ω Qg,typ 10.5 nC ID,pulse 8.3 A Eoss @ 400V 1.15 µJ Body diode di/dt 500 A/µs Type/OrderingCode IPS65R1K4C6 Package PG-TO 251-3 Marking 65C61K4 IPAKSL tab Gate Pin 1 Drain Pin 2 Source Pin 3 RelatedLinks see Appendix A Final Data Sheet 1 Rev.2.1,2017-07-25 650VCoolMOSªC6PowerTransistor IPS65R1K4C6 TableofContents Description . . . . . . . . . . . . . . . . . . ....