IPC100N04S5L-1R1
OptiMOS™-5 Power-Transistor
Product Summary
Features • OptiMOS™ - power MOSFET for automotive applic...
IPC100N04S5L-1R1
OptiMOS™-5 Power-
Transistor
Product Summary
Features OptiMOS™ - power MOSFET for automotive applications
VDS RDS(on),max ID
40 V 1.1 m 100 A
PG-TDSON-8-34
N-channel - Enhancement mode - Logic Level
AEC Q101 qualified
MSL1 up to 260°C peak reflow
1
175°C operating temperature Green Product (RoHS compliant)
1
100% Avalanche tested
Type IPC100N04S5L-1R1
Package
Marking
PG-TDSON-8-34 5N04L1R1
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature
I D,pulse T C=25°C
E AS I D=50A
I AS -
V GS
-
P tot T C=25°C
T j, T stg -
Value 100
100
400 480 100 ±16 150 -55 ... +175
Unit A
mJ A V W °C
Rev. 1.1
page 1
2016-09-07
IPC100N04S5L-1R1
Paramet...
