IPP114N03LG

Type OptiMOS™3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Avalanche rated Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 Type IPP114N03L G IPB114N03L G Product Summary V DS R DS(on),max ID IPP114N03L G IPB114N03L G 30 V 11.4 mΩ 30 A Package Marking PG-TO220-3-1 114N03L PG-TO263-3 114N03L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C Pulsed drain current2) Avalanche current, single pulse3) Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage 1) J-STD20 and JESD22 Rev. 2.0 I D,pulse I AS E AS dv /dt V GS V GS=4.5 V, T C=25 °C V GS=4.5 V, T C=100 °C T C=25 °...