IPB107N20NA IPP110N20NA
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(o...
IPB107N20NA IPP110N20NA
OptiMOSTM3 Power-
Transistor
Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max (TO263) ID
175 °C operating temperature
Pb-free lead plating; RoHS compliant
Qualified according to AEC Q101
Halogen-free according to IEC61249-2-21
Ideal for high-frequency switching and synchronous rectification
Type
IPB107N20NA
IPP110N20NA
200 V 10.7 mW 88 A
Package Marking
PG-TO263-3 107N20NA
PG-TO220-3 110N20NA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current Pulsed drain current1)
ID I D,pulse
T C=25 °C T C=100 °C T C=25 °C
Avalanche energy, single pulse
E AS I D=80 A, R GS=25 W
Reverse diode dv /dt
dv /dt
Gate source voltage
V GS
Power dissipation Operating and storage temperature
P tot T C=25 °C T j, T stg
IEC climatic category; DIN IEC 68-1
1) See figure 3
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