IPI051N15N5
MOSFET
OptiMOSª5Power-Transistor,150V
Features
Package •ExcellentgatechargexRDS(on)product(FOM) •...
IPI051N15N5
MOSFET
OptiMOSª5Power-
Transistor,150V
Features
Package ExcellentgatechargexRDS(on)product(FOM) Verylowon-resistanceRDS(on) 175°Coperatingtemperature Pb-freeleadplating;RoHScompliant QualifiedaccordingtoJEDEC1)fortargetapplication Idealforhigh-frequencyswitchingandsynchronousrectification Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 150 V
RDS(on),max(TO262)
5.1
mΩ
ID 120 A
I²-PAK
tab
1 23
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/OrderingCode IPI051N15N5
Package PG-TO262-3
Marking 051N15N5
RelatedLinks -
1) J-STD20 and JESD22 Final Data Sheet
1
Rev.2.0,2016-02-01
OptiMOSª5Power-
Transistor,150V
IPI051N15N5
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . ....
