MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTMFDPower-Transistor,200V IPP120N20NFD
Data...
MOSFET
MetalOxideSemiconductorFieldEffect
Transistor
OptiMOSTM
OptiMOSTMFDPower-
Transistor,200V IPP120N20NFD
DataSheet
Rev.2.0 Final
PowerManagement&Multimarket
1Description
Features
N-channel,normallevel FastDiode(FD)withreducedQrr Optimizedforhardcommutationruggedness Verylowon-resistanceRDS(on) 175°Coperatingtemperature Pb-freeleadplating;RoHScompliant QualifiedaccordingtoJEDEC1)fortargetapplication Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 200 V
RDS(on),max
12
mΩ
ID 84 A
OptiMOSTMFDPower-
Transistor,200V IPP120N20NFD
TO-220-3
tab
Gate Pin 1
Drain Pin 2, tab
Source Pin 3
Type/OrderingCode IPP120N20NFD
Package PG-TO220-3
Marking 120N20NF
RelatedLinks -
1) J-STD20 and JESD22 Final Data Sheet
2
Rev.2.0,2014-02-06
OptiMOSTMFDPower-
Transistor,200V
IPP120N20NFD
TableofContents
Description . . . . . . . . . . . ....