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MUR30120CT

Inchange Semiconductor

Fast Recovery Rectifier

Fast Recovery Rectifier FEATURES ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·150℃ Operating Junc...


Inchange Semiconductor

MUR30120CT

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Description
Fast Recovery Rectifier FEATURES ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·150℃ Operating Junction Temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching power supplies, inverters and as free wheeling diodes. MUR30120CT ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 1200 V IF(AV) Average Rectified Forward Current Per Leg (Rated VR) Total Device 15 30 A IFM Peak Repetitive Forward Current (Rated VR, Square Wave,20kHz) Per Diode Leg 30 A Nonrepetitive Peak Surge Current IFSM (Surge applied at rated load conditions half- 300 A wave, single phase, 60Hz) TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark Fast Recovery Rectifier THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MUR30120CT MAX 0.9 UNIT ℃/W ELECTRICAL CHARACTERISTICS(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS MAX VF Maximum Instantaneous Forward Voltage IF= 15A 2.0 IR Maximum Instantaneous Reverse Current VRRM= 1200V 10 trr Maximum Reverse Recovery Time IF =20A,di/dt = 200A/µs, VCC = 150V 500 UNIT V μA ns NOTICE: ISC reserves the rights to make changes of the content herein the dat...




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