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NLU1GT125 Dataheets PDF



Part Number NLU1GT125
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Non-Inverting 3-State Buffer
Datasheet NLU1GT125 DatasheetNLU1GT125 Datasheet (PDF)

NLU1GT125 Non-Inverting 3-State Buffer, TTL Level LSTTL−Compatible Inputs The NLU1GT125 MiniGatet is an advanced CMOS high−speed non−inverting buffer in ultra−small footprint. The NLU1GT125 requires the 3−state control input OE to be set High to place the output in the high impedance state. The device input is compatible with TTL−type input thresholds and the output has a full 5.0 V CMOS level output swing. The NLU1GT125 input and output structures provide protection when voltages up to 7.0 V ar.

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NLU1GT125 Non-Inverting 3-State Buffer, TTL Level LSTTL−Compatible Inputs The NLU1GT125 MiniGatet is an advanced CMOS high−speed non−inverting buffer in ultra−small footprint. The NLU1GT125 requires the 3−state control input OE to be set High to place the output in the high impedance state. The device input is compatible with TTL−type input thresholds and the output has a full 5.0 V CMOS level output swing. The NLU1GT125 input and output structures provide protection when voltages up to 7.0 V are applied, regardless of the supply voltage. Features • High Speed: tPD = 3.8 ns (Typ) @ VCC = 5.0 V • Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C • TTL−Compatible Input: VIL = 0.8 V; VIH = 2.0 V • CMOS−Compatible Output: VOH > 0.8 VCC; VOL < 0.1 VCC @ Load • Power Down Protection Provided on inputs • Balanced Propagation Delays • Ultra−Small Packages • NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable • These are Pb−Free Devices OE 1 6 VCC IN A 2 5 NC www.onsemi.com MARKING DIAGRAMS UDFN6 1.2 x 1.0 7M CASE 517AA 1 UDFN6 1.0 x 1.0 LM CASE 517BX 1 UDFN6 1.45 x 1.0 DM CASE 517AQ 1 7 = Device Marking M = Date Code ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. GND 3 4 OUT Y Figure 1. Pinout (Top View) OE IN A OUT Y Figure 2. Logic Symbol FUNCTION TABLE Input A OE Output Y L L L H L H X H Z PIN ASSIGNMENT 1 OE 2 IN A 3 GND 4 OUT Y 5 NC 6 VCC © Semiconductor Components Industries, LLC, 2016 1 January, 2019 − Rev. 7 Publication Order Number: NLU1GT125/D NLU1GT125 MAXIMUM RATINGS Symbol Parameter Value Unit VCC VIN VOUT IIK IOK IO ICC IGND TSTG TL TJ MSL DC Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Source/Sink Current DC Supply Current Per Supply Pin DC Ground Current per Ground Pin Storage Temperature Range Lead Temperature, 1 mm from Case for 10 Seconds Junction Temperature Under Bias Moisture Sensitivity VIN < GND VOUT < GND −0.5 to +7.0 V −0.5 to +7.0 V −0.5 to +7.0 V −20 mA ±20 mA ±12.5 mA ±25 mA ±25 mA −65 to +150 °C 260 °C 150 °C Level 1 FR Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in ILATCHUP Latchup Performance Above VCC and Below GND at 125°C (Note 2) ±500 mA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow. 2. Tested to EIA / JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Parameter VCC VIN VOUT TA Dt/DV Positive DC Supply Voltage Digital Input Voltage Output Voltage Operating Free−Air Temperature Input Transition Rise or Fall Rate VCC = 3.3 V ± 0.


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