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12N10P Dataheets PDF



Part Number 12N10P
Manufacturers CHONGQING PINGYANG
Logo CHONGQING PINGYANG
Description N-CHANNEL MOSFET
Datasheet 12N10P Datasheet12N10P Datasheet (PDF)

12N10P 12 Amps,100 Volts N-CHANNEL Power MOSFET FEATURE  12A,100V,RDS(ON)MAX=36mΩVGS=10V/10A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability APPLICATION  High Frequency Piont-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA  Networking DC-DC Power System  LCD/LED back light GENERAL DESCRIPTION SOP8L PIN CONFIGURATION The 12N10P is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON.

  12N10P   12N10P


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12N10P 12 Amps,100 Volts N-CHANNEL Power MOSFET FEATURE  12A,100V,RDS(ON)MAX=36mΩVGS=10V/10A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability APPLICATION  High Frequency Piont-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA  Networking DC-DC Power System  LCD/LED back light GENERAL DESCRIPTION SOP8L PIN CONFIGURATION The 12N10P is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The 12N10P meet the RoHS and Green product requirement,100% EAS guaranteed with full function reliability approved. Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current Reverse Diode dV/dt (Note 3) Operating Junction and Storage T.


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