8N65

isc N-Channel Mosfet Transistor INCHANGE Semiconductor 8N65 ·FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.4Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High efficiency switch mode power supply ·PWM motor controls ·High efficient DC to DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 8 A IDM Drain Current-Single Plused 32 A PD Total Dissipation @TC=25℃ 147 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.85 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor INCHANGE Semiconductor 8N65 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 4A IGSS Gate-Body Leakage Current VGS= ±30V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 650V; VGS= 0 VSD Forward On-Voltage IS= 8A; V...