BSC042N03MSG

BSC042N03MS G OptiMOS™3 Power-MOSFET Features Optimized for 5V driver application (Notebook, VGA, POL) Low FOMSW for High Frequency SMPS 100% Avalanche tested N-channel Very low on-resistance R DS(on) @ V GS=4.5 V Excellent gate charge x R DS(on) product (FOM) Qualified according to JEDEC1) for target applications Superior thermal resistance Pb-free plating; RoHS compliant Product Summary VDS RDS(on),max ID VGS=10 V VGS=4.5 V 30 4.2 5.4 93 PG-TDSON-8 V mW A Halogen-free according to IEC61249-2-21 Type BSC042N03MS G Package PG-TDSON-8 Marking 042N03MS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C Pulsed drain current3) Avalanche current, single pulse4) Avalanche energy, single pulse Gate source voltage 1) J-STD20 and JESD22 V GS=4.5 V, T C=25 °C V GS=4.5 V, T C=100 °C V GS=4.5 V, T A=25 °C, R thJA=50 K/W2) I ...