OptiMOSTM3 Power-Transistor
Features • Very low gate charge for high frequency applications • Optimized for dc-dc conver...
OptiMOSTM3 Power-
Transistor
Features Very low gate charge for high frequency applications Optimized for dc-dc conversion N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) 150 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to IEC61249-2-21
BSC046N10NS3 G
Product Summary
VDS RDS(on),max ID
100 V 4.6 mW 100 A PG-TDSON-8
Type BSC046N10NS3 G
Package PG-TDSON-8
Marking 046N10NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
T A=25 °C, R thJA=50 K/W2)
Pulsed drain current3)
I D,pulse T C=25 °C
Avalanche energy, single pulse Gate source voltage
E AS V GS
I D=50 A, R GS=25 W
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
100 8...
