OptiMOS™3 Power-Transistor
Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Quali...
OptiMOS™3 Power-
Transistor
Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel; Logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance 100% Avalanche tested Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21
BSC059N04LS G
Product Summary VDS RDS(on),max ID
40 V 5.9 mW 73 A
PG-TDSON-8
Type BSC059N04LS G
Package PG-TDSON-8
Marking 059N04LS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C
Pulsed drain current3) Avalanche current, single pulse4) Avalanche energy, single pulse Gate source voltage 1) J-STD20 and JESD22
V GS=4.5 V, T C=25 °C
V GS=4.5 V, T C=100 °C
V GS=10 V, T A=25 °C, R thJA=50 K/W2)
I D,pulse I AS E AS V GS
T C=25 °C T C=25 ...
