Type
OptiMOSTM3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology f...
Type
OptiMOSTM3 Power-
Transistor
Features
Ideal for high frequency switching and sync. rec.
Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Superior thermal resistance
N-channel, logic level
100% avalanche tested
Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21
Type
BSC100N06LS3 G
BSC100N06LS3 G
Product Summary VDS RDS(on),max ID
60 V 10 mW 50 A
Package
PG-TDSON-8
Marking
100N06LS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C
50 A 36
V GS=4.5 V, T C=25 °C
41
V GS=4.5 V, T C=100 °C
26
V GS=10 V, T A=25 °C, R thJA=50 K/W2)
12
Pulsed drain current3)
I D,pulse T C=25 °C
200
Avalanche energy, single pulse4) E AS I D=50 A, R GS=25 W
22 mJ
Gate source voltage
V GS
±20 V
1) J-...