AP04N70BI-H

Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G AP04N70BI-H RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS 700V RDS(ON) 2.4Ω ID 4A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM package is widely preferred for commercial-industrial applications. The device is suited for switch mode power supplies, DCAC converters and high current high speed switching circuits. G DS TO-220CFM(I) Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation EAS IAR TSTG TJ Linear Derating Factor Single Pulse Avalanche Energy2 Avalanche Current Storage Temper...