AP15N03GI

Advanced Power Electronics Corp. AP15N03GI RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G D S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM isolation package is widely preferred for commercial-industrial through hole applications. BVDSS RDS(ON) ID 30V 80mΩ 15A GD S TO-220CFM(I) Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS ID@TC=25℃ ID@TC=100℃ IDM Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 PD@TC=25℃ TSTG TJ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating 30 +20 15 9 50 20.8 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Therma...