DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP6900GH-HF
Preliminary DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive R...
Description
Advanced Power Electronics Corp.
AP6900GH-HF
Preliminary DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Fast Switching Performance
▼ Two Independent Device ▼ Halogen Free & RoHS Compliant Product
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
SDPAKTM used APEC innovated package and provides two independent device that is suitable and optimum for DC/DC power application.
CH-1 CH-2
BVDSS
RDS(ON)
ID BVDSS RDS(ON) ID
30V 6.2mΩ
72A 30V 10mΩ 45A
D1 (TAB1) D2 (TAB2)
S1 G1 S2 G2
SDPAKTM
D1 D2
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Tem...
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