AP6900GSM

Advanced Power Electronics Corp. AP6900GSM Pb Free Plating Product DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE ▼ Simple Drive Requirement ▼ DC-DC Converter Suitable ▼ Fast Switching Performance Description S1/D2 S1/D2 S1/D2 G1 SO-8 S2/A G2 D1 D1 CH-1 CH-2 BVDSS RDS(ON) ID BVDSS RDS(ON) ID The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. D1 G1 N-Channel 1 MOSFET 30V 30mΩ 5.7A 30V 22mΩ 9.8A S1/D2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating J...