DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP6904GH-HF
Preliminary DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive R...
Description
Advanced Power Electronics Corp.
AP6904GH-HF
Preliminary DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Fast Switching Performance
▼ Two Independent Device ▼ Halogen Free & RoHS Compliant Product
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
SDPAKTM used APEC innovated package and provides two independent device that is suitable and optimum for DC/DC power application.
BVDSS RDS(ON) ID
30V 18mΩ
22A
D1 (TAB1) D2 (TAB2)
S1 G1 S2 G2
SDPAKTM
D1 D2
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
G1 G2
S1
Rating 30 +20 22 ...
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