EM63B165TS

EtronTech EM63B165TS 32M x 16 bit Synchronous DRAM (SDRAM) Advance (Rev. 2.0, Feb. /2016) Features  Fast access time from clock: 4.5/5/5.4 ns  Fast clock rate: 200/166/143 MHz  Fully synchronous operation  Internal pipelined architecture  8M word x 16-bit x 4-bank  Programmable Mode registers - CAS Latency: 2 or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: Sequential or Interleaved - Burst stop function  Auto Refresh and Self Refresh  8192 refresh cycles/64ms  CKE power down mode  Single +3.3V ±0.3V power supply  Operating Temperature: TA = 0~70°C  Interface: LVTTL  54-pin 400 mil plastic TSOP II package - Pb free and Halogen free Overview The EM63B165 SDRAM is a high-speed CMOS synchronous DRAM containing 512 Mbits. It is internally configured as 4 Banks of 8M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst orie...