Power Transistors
2SD2453
Silicon NPN triple diffusion planar type
For high current transfer ratio and power amplificati...
Power
Transistors
2SD2453
Silicon
NPN triple diffusion planar type
For high current transfer ratio and power amplification
■ Features High forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat)
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current *
Base current
Collector power dissipation
TC = 25°C
VCBO VCEO VEBO
IC ICP IB PC
80 60 6 2 4 1 10 1
Junction temperature Storage temperature
Tj 150 Tstg −55 to +150
Note) Non-repetitive peak collector current
Unit V V V A A A W
°C °C
6.5±0.1 5.3±0.1 4.35±0.1
Unit: mm 2.3±0.1
0.5±0.1
7.3±0.1 1.8±0.1
0.8 max.
1.0±0.2
2.5±0.1
4.6±0.1
1.0±0.1
0.1±0.05
0.5±0.1 0.75±0.1
2.3±0.1
(5.3)
(4.35)
(3.0)
(1.8) (5.5)
12
1: Base 2: Collector 3: Emitter EIAJ: SC-63 U-G2 Package
3
Note) Self-supported type...
