2N7002KW

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2N7002KW V(BR)DSS  9 N-Channel MOSFET RDS(on)MAX ȍ#9 ȍ#9 ID P$ SOT-323 3 1. GATE 2. SOURCE 1 3. DRAIN 2 FEATURE z High density cell design for Low RDS(on) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability z ESD protected M$5.,1* APPLICATION z /RDG 6ZLWFK IRU 3RUWDEOH 'HYLFHV z '&'& &RQYHUWHU Equivalent Circuit MOSFET MAXIMUM RATINGS (Ta=25Я unless otherwise noted) Symbol VDS V*S ID IDM PD Tj Tstg RșJA Parameter Drain-Source Voltage *DWH-Source Voltage Continuous Drain Current Pulsed Drain Current(note1) Power Dissipation Junction Temperature Storage Temperature Thermal Resistance from Junction to Ambient Value 60 ±0 340 800 0.2 150 -55~+150 625 Unit V V mA mA W Я Я Я/W ZZZFMHOHFFRP  IAug6 026)(7 (/(&75,&$/ &+$5$&7(5,67,&6 Ta=25 Я unless otherwise specified Parameter Symbol Test Condition STAT...