2N7002KW

2N7002KW — N-Channel Enhancement Mode Field Effect Transistor May 2011 2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101 D S G SOT-323 Marking : 7KW Absolute Maximum Ratings * TA = 25°C unless otherwise noted Symbol Parameter Value Units VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous TJ = 100°C - Pulsed 60 ±20 310 195 1.2 V V mA mA A TJ TSTG Operating Junction Temperature Range Storage Temperature Range -55 to +150 -55 to +150 °C °C * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics Symbol Parameter Value PD RθJA Total Device Dissipation Derati...