2N7002T

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS 2N7002T MOSFET (N-Channel) V(BR)DSS 60 V RDS(on)MAX  5Ω@10V  7Ω@5V   ID 115mA SOT-523 3 1. GATE 2. SOURCE 3. DRAIN 1 2 FEATURE z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability MARKING K72 APPLICATION z Load Switch for Portable Devices z DC/DC Converter Equivalent Circuit K72= Device Code Solid dot = Green molding compound device,if none, the normal device. MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VDS Parameter Drain-Source voltage Value 60 Unit V VGS ID PD RθJA TJ Tstg Gate-Source voltage Drain Current ±20 V 115 mA Power Dissipation 150 mW Thermal Resistance from Junction to Ambient 833 ℃/W Junction Temperature 150 ℃ Storage Temperature -55~+150 ℃ www.cj-elec.com 1 J,Sep,2016 MOSFET ELECTRICAL CHARACTERISTICS Ta=25 ℃ unless otherwise specified ...