2SK3018

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2SK3018 N-channel MOSFET V(BR)DSS 30 V RDS(on)MAX  8Ω@4V  13Ω@2.5V   ID 100mA SOT-323 1. GATE 2. SOURCE 3. DRAIN FEATURE z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for Portable equipment z Easily designed drive circuits z Easy to parallel MARKING APPLICATION z Interfacing , Switching Equivalent Circuit MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted) Symbol VDS VGS ID Parameter Drain-Source voltage Gate-Source Voltage Continuous Drain Current PD Power Dissipation TJ Junction Temperature Tstg RθJA Storage Temperature Thermal Resistance from Junction to Ambient Value 30 ±20 0.1 0.2 150 -55-150 625 Unit V V A W ℃ ℃ ℃ /W www.cj-elec.com 1 D,Apr,2015 MOSFET ELECTRICAL CHARACTERISTICS Ta=25 ℃ unless otherwise specified Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Cu...