2SK3541Y3

CYStech Electronics Corp. Spec. No. : C800Y3 Issued Date : 2011.12.22 Revised Date : Page No. : 1/8 ESD protected N-Channel Enhancement Mode MOSFET 2SK3541Y3 BVDSS ID RDSON@4V Description RDSON@2.5V Low voltage drive(2.5V drive) makes this device ideal for portable equipment. High speed switching ESD protected device Pb-free lead plating & halogen-free package 30V 100mA 3.4Ω (TYP) 6.9Ω (TYP) Symbol 2SK3541Y3 G Outline SOT-723 D G：Gate S：Source D：Drain S GS Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Reverse Drain Current Continuous Pulsed Total Power Dissipation ESD susceptibility Operating Junction and Storage Temperature Range Thermal Resistance, Junction-to-Ambient Note : *1. Pulse Width ≤ 10μs, Duty cycle ≤1% *2. With each pin mounted on the recommended lands. *3. Human body model, 1.5kΩ in series with 100pF 2SK3541Y3 Symbol BVDSS VGS ID IDP IDR...