BSS123

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS BSS123 N Channel MOSFET V(BR)DSS 100 V RDS(on)MAX  6Ω@10V  10Ω@4.5V   ID 0.17A FEATURE  Surface Mount Package  High Density Cell Design for Extremely Low RDS(ON)  Voltage Controlled Small Signal Switch  Rugged and Reliable SOT-23 1. GATE 2. SOURCE 3. DRAIN APPLICATION  Small Servo Motor Controls  Power MOSFET Gate Drivers  Switching Application MARKING Equivalent Circuit ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter N-MOSFET Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (note 1) Pulsed Drain Current (tp=10us) Continous Source-Drain Diode Current Power Dissipation Thermal Resistance from Junction to Ambient (note 1) Junction Temperature Storage Temperature Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) Symbol VDS VGS ID IDM IS PD RθJA TJ TSTG TL Value 100 ±20 0.17 0.68 0.17 0.35 357 150 -55~+150 2...