P-Channel MOSFET
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ2301B P-Channel 20-V(D-S) MOSFE...
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ2301B P-Channel 20-V(D-S) MOSFET
V(BR)DSS
-20 V
RDS(on)MAX
120mΩ@-4.5V 160mΩ@-2.5V
ID
-2.3A
SOT-23
1. GATE 2. SOURCE 3. DRAIN
FEATURE z TrenchFET Power MOSFET
APPLICATION z Load Switch for Portable Devices
z DC/DC Converter
MARKING
Equivalent Circuit
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Thermal Resistance from Junction to Ambient(t ≤5s) Junction Temperature Storage Temperature
VDS VGS ID IDM IS PD R θJA TJ Tstg
Value
-20 ±8 -2.3 -10 -0.72 0.35 357 150 -55 ~+150
Unit V
A
W ℃/W
℃
www.cj-elec.com
1
C,May,2015
MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 ℃ unless otherwise specified
Parameter
Symbol Test Condition
Static Drain-source breakdown voltage Gate-source threshold voltage Gat...
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