CJ3434

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3434 N-Channel MOSFET V(BR)DSS 30V RDS(on)MAX 42 mΩ@10V  44 mΩ@4.5V 50 mΩ@2.5V ID 5A  SOT-23 FEATURE z TrenchFET Power MOSFET z Low RDS(ON) z Typical ESD Protection APPLICATION z Ideal for Load Swith and Battery Protection Applications MARKING Equivalent Circuit D G S ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) *Repetitive rating：Pluse width limited by junction temperature. Symbol VDS VGS ID IDM* RθJA TJ TSTG TL Value 30 ±10 5 20 417 150 -55~+150 260 Unit V V A A ℃/W ℃ ℃ ℃ www.cj-elec.com 1 A-2,Apr,2015 MOSFET ELECTRICAL CHARACTERISTICS Ta=25 ℃ unless otherwise specified Parameter Symbol Test Co...