CJ8820

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ8820 V(BR)DSS 20V Dual N-Channel MOSFET RDS(on)MAX 21mΩ@10V 24mΩ@4.5V 28mΩ@3.8V 32mΩ@2.5V 50mΩ@1.8V ID 7A DESCRIPTION The CJ8820 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. MARKING SOT-23 1. GATE 2. SOURCE 3. DRAIN Equivalent Circuit MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(note1) Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) *Repetitive rating：Pluse width limited by junction temperature. Symbol VDS VGS ID IDM * RθJA Tj Tstg TL www.cj-elec.com 1 Value 20 ±12 7 25 417 150 -55~+15...