N-Channel MOSFET
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
PDFNWB3.3×3.3-8L Plastic-Encapsulate MOSFETS
CJAB25N03
V(BR)DSS
30 ...
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
PDFNWB3.3×3.3-8L Plastic-Encapsulate MOSFETS
CJAB25N03
V(BR)DSS
30 V
DESCRIPTION
N-Channel Power MOSFET
RDS(on)MAX
ID
10mΩ@10V 14mΩ@4.5V
25A
PDFNWB3.3×3.3-8L
The CJAB25N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications
FEATURES
Battery switch Load switch
Good stability and uniformity with high EAS Excellent package for good heat dissipation
High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and
Special process technology for high ESD capability
current
APPLICATIONS
SMPS and general purpose applications
Hard switched and high frequency circuits MARKING
Uninterruptible Power Supply EQUIVALENT CIRCUIT
CJAB25N03 = Part No.
D DDD 8 7 65
Solid dot=Pin1 indicator
XXX=Date Code
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
1 234 S S SG
...
Similar Datasheet