CJAB25N03

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.3×3.3-8L Plastic-Encapsulate MOSFETS CJAB25N03 V(BR)DSS 30 V DESCRIPTION N-Channel Power MOSFET RDS(on)MAX ID   10mΩ@10V  14mΩ@4.5V  25A PDFNWB3.3×3.3-8L The CJAB25N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES  Battery switch  Load switch  Good stability and uniformity with high EAS  Excellent package for good heat dissipation  High density cell design for ultra low RDS(ON)  Fully characterized avalanche voltage and  Special process technology for high ESD capability current APPLICATIONS  SMPS and general purpose applications  Hard switched and high frequency circuits MARKING  Uninterruptible Power Supply EQUIVALENT CIRCUIT CJAB25N03 = Part No. D DDD 8 7 65 Solid dot=Pin1 indicator XXX=Date Code MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) 1 234 S S SG ...