CJAC35N03

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD PDFN:%5×6-8L Plastic-Encapsulate MOSFETS CJAC35N03 V(BR)DSS 30 V N-Channel Power MOSFET RDS(on)MAX ID   7mΩ@10V  12mΩ@4.5V  35A PDFN:%5×6-8L DESCRIPTION The CJAC35N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES  High density cell design for ultra low RDS(ON)  Fully characterized avalanche voltage and current  Good stability and uniformity with high EAS APPLICATIONS  Excellent package for good heat dissipation  Special process technology for high ESD capability  High side switch in POL DC/DC converter MARKING CJAC35N03 = Part No. Solid dot=Pin1 indicator XXX=Date Code  Secondary side synchronous rectifier EQUIVALENT CIRCUIT D DDD 8 7 65 MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) 1 234 S S SG Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Curre...