N-Channel Power MOSFET
CJD02N60
TO-251-3L Plastic-Encapsulate MOSFETS
CJD02N60 N-Channel Power MOSFET
General Description The high voltage MO...
Description
CJD02N60
TO-251-3L Plastic-Encapsulate MOSFETS
CJD02N60 N-Channel Power MOSFET
General Description The high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes . The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power suppliers, converters and PWM motor controls , these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
TO-251-3L
1. GATE 2. DRAIN 3. SOURCE
FEATURE z Robust High Voltage Termination z Avalanche Energy Specified z Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode z Diode is Characterized fo...
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