Document
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTM3Power-Transistor,100V IPT020N10N3
DataSheet
Rev.2.0 Final
PowerManagement&Multimarket
1Description
Features
•N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Extremelylowon-resistanceRDS(on) •Highcurrentcapability •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 100 V
RDS(on),max
2
mΩ
ID 300 A
OptiMOSTM3Power-Transistor,100V IPT020N10N3
HSOF
12345 678
Tab
Drain Tab
Gate Pin 1
Source Pin 2-8
Type/OrderingCode IPT020N10N3
Package PG-HSOF-8-1
Marking 020N10N3
RelatedLinks -
1) J-STD20 and JESD22 Final Data Sheet
2
Rev.2.0,2014-02-17
OptiMOSTM3Power-Transistor,100V
IPT020N10N3
TableofContents
Description . . . . . . . . . . . . . ..