IPT111N20NFD

IPT111N20NFD MOSFET OptiMOSª3Power-Transistor,200V Features N-channel,normallevel FastDiode(FD)withreducedQrr Optimizedforhardcommutationruggedness Verylowon-resistanceRDS(on) 175°Coperatingtemperature Pb-freeleadplating;RoHScompliant QualifiedaccordingtoJEDEC1)fortargetapplication Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 200 V RDS(on),max 11.1 mΩ ID 96 A HSOF 12345 678 Tab Drain Tab Gate Pin 1 Source Pin 2-8 Type/OrderingCode IPT111N20NFD Package PG-HSOF-8 Marking 111N20NF RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.1,2016-02-23 OptiMOSª3Power-Transistor,200V IPT111N20NFD TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . ....