IPB010N06N
MOSFET
OptiMOSTMPower-Transistor,60V
Features
•Optimizedforsynchronousrectification •100%avalanche...
IPB010N06N
MOSFET
OptiMOSTMPower-
Transistor,60V
Features
Optimizedforsynchronousrectification 100%avalanchetested Superiorthermalresistance N-channel,normallevel QualifiedaccordingtoJEDEC1)fortargetapplications Pb-freeleadplating;RoHScompliant Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 60
V
RDS(on),max
1.0
mΩ
ID 180 A
Qoss 228 nC
QG(0V..10V)
208
nC
D²-PAK7pin
1 7
tab
Drain Pin 4, tab
Gate Pin 1
Source Pin 2,3,5,6,7
Type/OrderingCode IPB010N06N
Package PG-TO263-7
Marking 010N06N
RelatedLinks -
1) J-STD20 and JESD22 Final Data Sheet
1
Rev.2.4,2016-01-18
OptiMOSTMPower-
Transistor,60V
IPB010N06N
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . ....
