IPB025N08N3G
MOSFET
OptiMOSª3Power-Transistor,80V
Features
•N-channel,normallevel •ExcellentgatechargexRDS(...
IPB025N08N3G
MOSFET
OptiMOSª3Power-
Transistor,80V
Features
N-channel,normallevel ExcellentgatechargexRDS(on)product(FOM) Verylowon-resistanceRDS(on) 175°Coperatingtemperature Pb-freeleadplating;RoHScompliant QualifiedaccordingtoJEDEC1)fortargetapplication Idealforhigh-frequencyswitchingandsynchronousrectification Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 80
V
RDS(on),max
2.5
mΩ
ID 120 A
D²PAK
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/OrderingCode IPB025N08N3 G
Package PG-TO 263
Marking 025N08N
RelatedLinks -
1) J-STD20 and JESD22 Final Data Sheet
1
2016-03-31
OptiMOSª3Power-
Transistor,80V
IPB025N08N3G
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . ....
